Power Semiconductor
DCB & AMB Substrates

Power Semiconductor DCB & AMB Substrates

For insulating substrates and circuit substrates for heat release applying thermo-module manufacturing technology, many organic substrates and metallic substrates are generally used for low-power home electrical appliances and PCs, etc. As heat-release insulating substrates for power modules handling large amounts of power, alumina, aluminum nitride, and silicon nitride substrates are used.
Especially for the power module of an inverter / converter upon the increase of the sales volume of HEV and EV, silicon nitride substrates have attracted attention. Our company started the mass production of new products, AMB (Active Metal Brazing) substrates in addition to the existing products, DCB Direct Copper Bonding) substrates.
This product contributing to downsizing and energy saving is expected to grow in the future.

Product Line

  • Al₂O₃ DCB Substrate(ZTA)

  • Al₂O₃ DCB Substrate(Electroless Ag Plating)

  • Al₂O₃ DCB Substrate(Electroless Ni-Au Plating)

  • Al₂O₃ DCB Substrate

DCB Substrate properties
DCB Substrate Item Value Unit
Master Card Size(Max) 138*190 mm
Max.Useable area(Max) 127*178 mm
Sacing between SOLDERMASK pattern(Min) Followed by design rule mm
SOLDERMASK pattern width(Min) +0.3/-0.2 mm
Peeling Strength(Min) >5 N/mm
Solderability >95% %
Delivery Term Single Pieces Delivery/Mastercard Delivery
Surface Options Bare Copper/Solder Stop/Electronics Ni-Plating::2~8/
Electroless NiAu-Plating::2~8&0.01~0.1/Electroless Ag 0.1-0.6μm
µm
Material ZTA Ceramic Content 90% Al / ZrO₂ %
Thickness 0.32,0.25 mm
Density 3.95 g/cm³
Thermal Conductivity 27 W/m.k
Bending Strength 600 W/m.k
Dielectric Constant 10.5 1MHz
Dielectric Loss 0.0003 1MHz
Dielectric Strength 20 kV/mm
Electrical Resistivity 1*1014 Ωcm
Al2O3 Ceramic Content 96% Al₂O₃ %
Thickness 1.00,0.89,0.76,0.63,0.5,0.3 8,0.32,0.25 mm
Density 3.73 g/cm³
Thermal Conductivity 24 W/m.k
Bending Strength 350~450 Mpa
Dielectric Constant 9.8 1MHz
Dielectric Loss 0.0003 1MHz
Dielectric Strength 20 kV/mm
Electrical Resistivity 1*1014 Ωcm
Copper Material OFHC %
Purity 99.99 %
Hardness 90~110 HV
Electrical Conductivity 58.6 MS/m
Copper Thickness 0.40,0.30,0.25,0.20,0.127 mm

AMB

Active Metal Brazing

  • SiN AMB Substrate(Electroless Ni-Au Plating)

  • SiN AMB Substrate(Bare copper)

  • SiN AMB Substrate(Electroless Ni Plating)

  • SiN AMB Substrate

AMB Substrate properties
AMB Substrate Item Value Unit
Master Card Size(Max) 138*190 mm
Max.Useable area(Max) 127*178 mm
Sacing between SOLDERMASK pattern(Min) Followed by design rule mm
SOLDERMASK pattern width(Min) +0.3/-0.2 mm
Peeling Strength(Min) >10 N/mm
Solderability >95% %
Delivery Term Single Pieces Delivery/Mastercard Delivery
Surface Options Bare Copper/Solder Stop/Electronics Ni-Plating::2~8/
Electroless NiAu-Plating:2~8&0.01~0.1/Electroless Ag 0.1-0.6μm
µm
Material SiN Ceramic SiN Content 96% SiN %
Thickness 0.32,0.25 mm
Density 3.22 g/cm³
Thermal Conductivity 90 W/m.k
Bending Strength 700 Mpa
Dielectric Constant 8 1MHz
Dielectric Loss 0.001 1MHz
Dielectric Strength 20 kV/mm
Electrical Resistivity 1*1014 Ωcm
AlN Ceramic Content 96% AlN %
Thickness 1.0,0.63,0.38,0.25 mm
Density 3.3 g/cm³
Thermal Conductivity 170 W/m.k
Bending Strength 350 Mpa
Dielectric Constant 9 1MHz
Dielectric Loss 0.0005 1MHz
Dielectric Strength 20 kV/mm
Electrical Resistivity 1*1014 Ωcm
Copper Material OFHC
Purity 99.99 %
Hardness 60~110 HV
Electrical Conductivity 58.6 MS/m
Copper Thickness 0.8,0.5,0.4,0.3,0.25,0.2 mm

Types, withstanding pressure, and use application of power semiconductors

Main market range of DCB/AMB: industrial equipment, vehicle, electric railway, recyclable energy

manufacturing site

    1. Shanghai
    2. Shanghai shenhe thermo-magnetics electronics Co.,Ltd.
    3. 181 Shanlian Road,Shanhai Baoshan City Industrial Zone 200444,P.R.China
    1. Dongtai
    2. Ferrotec(JiangSu)Semiconductor Technology Co.,Ltd.
    3. 18# Hongda Road, Chengdong New Zone, Dongtai, Jiangsu, P.R. China